The proposed photodetectors, featuring a novel metal-heterostructure-metal (MHM) structure, utilize the AlGaN/GaN heterostructure and the intrinsic polarization field at the heterointerface, where the spontaneous polarization spatially separates the photo-generated electrons and holes and significantly enhances the photoresponsivity of the MHM photodetector at high temperatures. We will develop a novel all-GaN integrated photodetection and amplifying integrated circuits based on this demonstrated MHM structure.
Low photo-response in high-temperature UV sensing for GaN-based photodetectors.
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